smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter features large current calcity (i c =2a) high blocking voltage(v ceo 400v) absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 400 v collector to emitter voltage v ceo 400 v emitter to base voltage v ebo 5v peak collector current i cp 4a collector current i c 2a collector power dissipation 1 w tc=25 15 w junction temperature t j 150 storage temperature t stg -55to+150 p c sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SC4616 smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type smd type smd type smd type product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =300v,i e =0 1 a emitter cut-off current i ebo v eb =4v,i c =0 1 a dc current gain h fe v ce =10v,i c =100ma 40 200 gain-bandwidth product f t v ce =10v,i c =100ma 60 mhz c-e saturation voltage v ce(sat) i c =500ma,i b =50ma 1 v b-e saturation voltage v be(sat) i c =500ma,i b =50ma 1 v c-b breakdown voltage v (br)cbo i c =10a,i e =0 400 v c-e breakdown voltage v (br)ceo i c =1ma,r be = 400 v e-b breakdown voltage v (br)ebo i e =10a,i c =0 5 v output capacitance c ob v cb =30v,f=1mhz 15 pf turn-on time t on 0.085 storage time t stg 4 fall time t r 0.6 s 2SC4616 h fe classification type c d e hfe 40 to 80 60 to 120 100 to 200 sales@twtysemi.com 2of 2 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type smd type smd type smd type product specification 4008-318-123
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